However, the actual integration of these electronic components into textiles that undergo mechanical deformation during assembly and daily wear, or that satisfy the requirements of the low-end applications, still remains a challenge. Several examples of polymer-based e-textiles, such as those containing transistors, logic circuits, sensors, antennas and batteries that are rechargeable by solar energy, on fibers or fabrics 22, 23, 24, 25, 26, have been demonstrated. The same PEDOT:PSS organic material-based bipolar, unipolar and nonpolar RRAM devices have also been reported 19, 20, 21. The write-once-read-many-times (WORM) memory using the PEDOT:PSS organic material 18 has been fabricated and demonstrated. Moreover, graphene-based organic hybrid materials have also attracted much attention in the development of the future flexible and stretchable non-volatile memories because of their solution-processability 16, 17. For manufacturing flexible and non-volatile memories, which are based on organic materials 15 and implemented on flexible substrates, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS which is an organic material) has been found to be suitable because of its low temperature of processing, low cost and ease of fabrication. To date, various insulating or semiconducting materials have been used in resistive memory applications, such as binary transition metal oxides 11, 12 or organic materials 8, 13, 14, 15, 16, 17, 18, 19, 20, 21. The operation of the RRAM depends on the principle of resistive hysteresis, which is also the concept behind the ‘memristor’ 10. When an electric voltage or current is applied to a material, the resistance of the material changes and this resistance can be measured. That is, the RRAM is a type of computer memory that works by changing the resistance of materials.
Recent developments in the field of resistive random access memories (RRAMs), which are based on resistive switching behavior, have attracted much attention because of their high response speeds, multibit storage capabilities and simple conductor/insulator (or semiconductor)/conductor-sandwich structures 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21. These information-storage devices are important and fundamental elements in modern digital electronic systems. For a simple e-textile system, the electronic elements may include sensors, a data processor and an information-storage unit. This will equip us better to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates and on the human body 6, 7. The integration of electronic elements into textiles, through conventional textile-processing techniques including weaving, knitting, embroidery and stitching, can provide an ideal platform for the development of lightweight, thin, flexible and stretchable e-textiles.
The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.Įlectronic textiles, also known as e-textiles, smart textiles and smart fabrics 1, are fabrics that contain electronic elements such as power supplies, sensors, display devices and memories 2, 3, 4, 5. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The results show that an ON/OFF ratio of approximately 10 3 is maintained for a retention time of 10 6 s. The NT memory appears to have typical write-once-read-many-times characteristics. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible and stretchable e-textiles.
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